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Low-Frequency Noise Assessment of the Oxide Quality of Gate-Last High- k pMOSFETs

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4 Author(s)
E. Simoen ; IMEC, Leuven, Belgium ; A. Veloso ; N. Horiguchi ; C. Claeys

The impact of wet versus dry dummy dielectric removal approaches on replacement metal gate (RMG) high- k last (RMG-HKL) pMOSFETs, with aggressively scaled high- k gate dielectric, has been studied by low-frequency noise. It is shown that excess generation-recombination noise, ascribed to random telegraph noise, causes a significant variability in the power spectral density (PSD). The best average PSD and the smallest device-to-device spread have been obtained by the remote-plasma dummy-gate removal followed by an in situ HF exposure prior to atomic layer deposition of HfO2.

Published in:

IEEE Electron Device Letters  (Volume:33 ,  Issue: 10 )