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Amorphous carbon films as planarization layers deposited by plasma-enhanced chemical vapor deposition

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2 Author(s)
Pang, S.W. ; MIT Lincoln Lab., Lexington, MA, USA ; Horn, M.W.

A dry planarization process utilizing plasma-enhanced chemical vapor deposition (PECVD) of amorphous carbon (a-C:H) films has been developed. The degree of planarization obtained for these films is better than that of many conventional spun-on polymers. Carbon films 2.5 mu m thick have been shown to planarize 1.5- mu m-deep, 400- mu m-wide trenches to within 0.2 mu m. The deposition process can be carried out at room temperature with low ion bombardment energy (10 V) and fast deposition rate (300 nm/min). The planarization layers have been used in conjunction with both wet and dry deposited inorganic imaging layers in bilayer resist schemes to form submicrometer patterns.<>

Published in:

Electron Device Letters, IEEE  (Volume:11 ,  Issue: 9 )