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Electron mobility measurement in short-channel FET's using the cutoff frequency method

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5 Author(s)
C. C. Sun ; Dept. of Electr. Eng., Toronto Univ., Ont., Canada ; J. M. Xu ; A. Hagley ; R. Surridge
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The cutoff frequency (FT) method is presented to measure electron mobility in short-channel field-effect transistors (FETs). This technique was used to study the electron mobilities in AlGaAs-GaAs self-aligned heterostructure insulated-gate field-effect transistors (HIGFETs), with both undoped and doped channels (E and D mode). The structures were molecular-beam-epitaxy (MBE) grown on

Published in:

IEEE Electron Device Letters  (Volume:11 ,  Issue: 9 )