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AlGaAs/GaAs npn heterojunction bipolar transistors grown by molecular beam epitaxy on Si (311)

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5 Author(s)
Jurkovic, M.J. ; Dept. of Electr. Eng., Columbia Univ., New York, NY, USA ; Alperin, J. ; Du, Q. ; Wang, W.I.
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AlGaAs/GaAs npn heterojunction bipolar transistors grown by molecular beam epitaxy on Si (311) substrates and fabricated using a self-aligned base contact process are reported. Reflection high energy electron diffraction patterns correlate with antiphase domain-free growth. Preliminary DC measurements for 70×70 μm2 device reveal a small-signal common-emitter current gain of 10 and a collector-emitter breakdown voltage of 13 V

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Electronics Letters  (Volume:33 ,  Issue: 19 )