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Observation of spectral hole burning in photocurrent spectrum of InAs self-assembled quantum dots embedded in PIN diode

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7 Author(s)
Sugiyama, Y. ; Fujitsu Labs. Ltd., Atsugi, Japan ; Nakata, Y. ; Muto, S. ; Horiguchi, N.
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The spectral hole burning of InAs self-assembled quantum dots (QDs) embedded in a PIN diode has been observed for the first time. The spectral hole depth increases as the electric field is increased. By numerical fitting to experimental results, the possibility of wavelength-domain multiplicity in optical memory by using InAs QDs is shown

Published in:

Electronics Letters  (Volume:33 ,  Issue: 19 )

Date of Publication:

11 Sep 1997

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