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Junction influence on drain current transients in partially-depleted SOI MOSFETs

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3 Author(s)
Ionescu, A.M. ; ENSERG, Grenoble, France ; Chovet, A. ; Chaudier, F.

A model and a numerical-simulation-based demonstration of source and drain junction influence on drain current transients in floating-body partially-depleted (PD) SOI MOSFETs are presented. The investigated transient regime is a Zerbst-type one. It is shown that the junction contribution strongly influences carrier generation processes and therefore affects the accuracy of generation lifetime evaluation when the transistor channel length is reduced. In SOI MOSFETs, the thorough investigation of the contribution of generation processes is essentially two-dimensional

Published in:

Electronics Letters  (Volume:33 ,  Issue: 20 )