By Topic

Optical Properties of a-SiGe:H Thin Film Transistor for Infrared Image Sensors in Touch Sensing Display

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Sang Youn Han ; LCD R&D Center, Samsung Display, Yongin, South Korea ; Kyung Tea Park ; Ho Sik Jeon ; Yang Wook Heo
more authors

We report the effects of monochromatic illumination on the electrical performance of a-SiGe:H thin-film transistor (TFT) and the use of this device as infrared (IR) image-sensing touch displays. In order to reduce the inevitable incidence of visible light into device, the visible cutting layer was designed, which played a critical role in reducing the optical noise from visible light. When the photo response was observed in real liquid crystal display (LCD) operation environment, it showed the display contents dependence, meaning that the supply of external IR light source for the touch sensing would be effective independent of any ambient light condition. Additionally, the optical noise from the display operation was eliminated using the block operation as well as the backlight IR light-emitting diode (LED) light modulation. From these, the clear touch images were successfully obtained in the a-SiGe:H photosensor embedded LCD panel.

Published in:

Display Technology, Journal of  (Volume:8 ,  Issue: 10 )