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A new self-consistent modeling approach to investigating MOSFET degradation

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3 Author(s)
Hansch, W. ; Siemens AG, Munchen, West Germany ; Schwerin, A.V. ; Hofmann, F.

A modeling tool is presented that allows a complete analysis of a DC stress experiment without assuming the location and amount of trapped oxide charges and interface states. To describe the buildup of oxide damage, a semiempirical rate equation approach is outlined. A completely self-consistent calculation is presented of the time dependence of the DC stress experiment. This calculation monitors the amount and location of charges built up in the 2-D oxide region during the stress line. The model includes competing trap mechanisms such as the formation of interface states and fixed oxide traps. This permits consideration of n- and p-channel MOSFETs with the same model. The calculations are compared to DC stress measurements on n- and p-channel devices with gate lengths of 0.65 mu m that are typical for 16-Mb DRAMs.<>

Published in:

Electron Device Letters, IEEE  (Volume:11 ,  Issue: 9 )