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Aluminium oxide (AlOx) thin film was grown using aluminium acetylacetonate (AlAcac3) as a source solute by mist chemical vapour deposition (CVD). The AlOx thin film grown at 430°C exhibited the breakdown field (EBD) and the dielectric constant (k) of 5.9 MV/cm and 6.8, respectively. It was suggested that the formation of boehmite (γ-AlO(OH)) in the films decreased the EBD of AlOx thin films at the growth temperatures below 350°C. In the mist CVD, the reaction proceeded efficiently (Ea = 23.5-26 kJ/mol) under the evaporated solvent atmosphere. The AlOx film was able to be grown at 430°C with high deposition ratio (18 nm/min) and smooth surface (RMS =1.6 nm).