Fabrication and characterization of thin-film transistor using dielectrophoretic assembly of single-walled carbon nanotube

A single-walled carbon nanotube thin-film transistor (SWNT TFT) was formed using aligned SWNT channels assembled by the dielectrophoretic (DEP) process. The density of assembled SWNTs was controlled by the DEP factors (concentration of SWNT solution and applied AC voltage). The on/off current ratio of the SWNT TFT was improved by decreasing SWNT density in a channel-achieved 4.0 × 10⁵-while the motility and on/off ratio still showed a reversible manner. DEP assembly is an effective method to achieve well-aligned and density-controlled SWNT channels for TFT applications.