By Topic

Characteristic analysis of p-i-n thin-film phototransistor using device simulation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Kimura, M. ; Dept. of Electron. & Inf., Ryukoku Univ., Otsu, Japan ; Miura, Y.

The optoelectronic characteristic of a p-i-n thin-film phototransistor is analyzed by comparing an actual device with device simulation. It is found using the actual device that the detected current is maximized when the control voltage is equal to the applied voltage. It is also found using the device simulation that a depletion layer is widely formed at that voltage because the electron mobility is higher than the hole mobility and the generated electrons can be rapidly transported and do not accumulate much in the poly-Si film. The behavior in the actual device can be explained by the results in the device simulation. Particularly in this presentation, we will illustrate how the electric current flows using the current flowline.

Published in:

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on

Date of Conference:

4-6 July 2012