By Topic

The uniform crystallization process towards the bottom-gated LTPS TFT back-plane technology for large-sized AM-OLED displays by CW green laser annealing

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Sugawara, Y. ; Image Devices Dev. Center, Panasonic Corp., Kyoto, Japan ; Oda, T. ; Saitoh, T. ; Komori, K.

Issues resulting from the fabrication of bottom-gated LTPS back-planes using large substrates by CW-GLA were overcome by novel design of a-Si and gate insulator thickness making use of thermal and optical simulation. By this, uniform crystallization on gate electrodes and stable TFT characteristics under fluctuation of film thickness became realized.

Published in:

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on

Date of Conference:

4-6 July 2012