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Crystallization to polycrystalline silicon films by underwater laser annealing and its application to thin film transistors

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5 Author(s)
Machida, E. ; Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Ikoma, Japan ; Horita, M. ; Ishikawa, Y. ; Uraoka, Y.
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We performed crystallization of an amorphous silicon by laser irradiation in flowing deionized-water where Nd: YAG THG laser (wave length = 355 nm) was used for annealing. As the results, we demonstrated that the underwater laser annealing (WLA) leads to giant- and uniform-grain growth as compared to laser annealing in air (LA). It is thought that the homogenization of the temperature distribution within the Si films enhances grain growth. In addition, we successfully fabricated the poly-Si TFTs with the use of WLA poly-Si as the channel layer. The output and the transfer characteristics were clearly obtained, and thus we succeeded in the TFT operation.

Published in:

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on

Date of Conference:

4-6 July 2012

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