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Light irradiation history sensor using amorphous In-Ga-Zn-O thin-film transistor fabricated by high oxygen partial pressure sputtering

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6 Author(s)
Hasegwa, T. ; Dept. of Electron. & Inf., Ryukoku Univ., Otsu, Japan ; Kimura, M. ; Ide, K. ; Nomura, K.
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We propose a light irradiation history sensor using an amorphous In-Ga-Zn-O (α-IGZO) thin-film transistor (TFT) fabricated by high oxygen partial pressure sputtering. The α-IGZO TFT has an interesting property. The Ids-Vgs characteristic shifts positively, and the subthreshold slope becomes steep when the gate bias is applied, whereas the Ids-Vgs characteristic shifts negatively and the subthreshold slope becomes gradual when the light is irradiated. Therefore, the α-IGZO TFT can be used as a light irradiation history sensor by the following steps. First, the gate bias is applied to reset the Ids-Vgs characteristic. Next, the light is irradiated, and finally, the Ids-Vgs characteristic is measured, which depends on the light irradiation history.

Published in:

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on

Date of Conference:

4-6 July 2012

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