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GaN-Based LEDs With Double Strain Releasing MQWs and Si Delta-Doping Layers

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5 Author(s)
Chung-Ying Chang ; Institute of Microelectronics and the Department of Electrical Engineering, Advanced Optoelectronic Technology Center, Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan, Taiwan ; Shoou-Jinn Chang ; C. H. Liu ; Shuguang Li
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In this letter, we report the fabrication of GaN-based light-emitting diodes (LEDs) with double strain releasing multiquantum wells and Si delta-doping (Si-DD) layers. We find that Si-DD can enhance current spreading in the in-plane direction and also suppress dislocation in the epitaxial layers. By inserting the Si-DD layers, we find that we can achieve a smaller forward voltage. We also find that we can significantly increase the reverse breakdown voltage from 35 to 125 V by introducing Si-DD layers. Furthermore, we find that the output power of the LED with Si-DD is more than 10% larger than that of the LED without Si-DD.

Published in:

IEEE Photonics Technology Letters  (Volume:24 ,  Issue: 20 )