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A High-Reliability High-Linearity High-Power RF MEMS Metal-Contact Switch for DC–40-GHz Applications

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2 Author(s)
Patel, C.D. ; Dept. of Electr. & Comput. Eng., Univ. of California at San Diego, La Jolla, CA, USA ; Rebeiz, G.M.

This paper presents an mN-level contact and restoring force RF microelectromechanical systems metal-contact switch exhibiting high reliability, high linearity, and high power handing for dc-40-GHz applications. The device, which is insensitive to stress and temperature effects, achieves 1.2-1.5 mN of contact force (per contact) from 80 to 90 V and 1.0 mN of restoring force (per contact). The up-state capacitance is 8 fF, resulting in an isolation of 46, 31, and 14 dB at 1, 6, and 40 GHz, respectively. Measured results show switch resistances of 1-2 Ω and a reliability of >; 100 million cycles at 2-5 W under cold switching at 100 mW under hot-switching conditions, in an unpackaged and standard laboratory environment. Furthermore, the device was tested under prolonged hold-down conditions and demonstrated excellent RF power handling (>;10 W) and dc current handling (>;1 A) capability.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:60 ,  Issue: 10 )