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Anomalous Output Conductance in N-Polar GaN High Electron Mobility Transistors

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5 Author(s)
Hoi Wong, Man ; Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA ; Singisetti, U. ; Jing Lu ; Speck, J.S.
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An anomalous output conductance that resembled short-channel effects was observed in long-channel N-polar GaN-channel/AlGaN-back-barrier/GaN-buffer high electron mobility transistors. The phenomenon could not be reasonably explained by drain-induced barrier lowering, leakage currents, or impact ionization events. We propose that the output conductance was caused by the ionization of a donorlike hole trap state at the negatively polarized AlGaN-back-barrier/GaN-buffer interface that shifted the threshold voltage at the drain side of the gate, where a high-field depletion region developed beyond current saturation. No evidence of increased output conductance or related device performance degradation was apparent under small-signal high-frequency conditions. The output conductance was suppressed by introducing photogenerated holes that compensated the traps. The effect of several typical back-barrier designs on the dc output conductance was examined.

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Electron Devices, IEEE Transactions on  (Volume:59 ,  Issue: 11 )