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An above-threshold current model is presented by combining the effective channel mobility with the Pao-Sah model for undoped polycrystalline-silicon thin-film transistors. The analytical drain current model is derived by fitting the polynomial curve to the experimental low field effective mobility and applying the trapped-charge-effect parameters. The free-charge comparison results show that the density-of-trap-state parameters for the Pao-Sah model are more reasonable by considering the effective channel mobility. Good agreements are obtained by comparing the drain current model with the Pao-Sah model and experimental data.