By Topic

44-Gb/s Silicon Microring Modulators Based on Zigzag PN Junctions

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Xi Xiao ; State Key Lab. on Integrated Optoelectron., Inst. of Semicond., Beijing, China ; Xianyao Li ; Hao Xu ; Yingtao Hu
more authors

We experimentally demonstrate silicon microring modulators with >;40-Gb/s modulation speed based on the carrier-depletion mechanism in reverse-biased PN junctions. A novel zigzag PN junction providing a modulation efficiency of 3.85× 10-5/V and a resistance-capacitance bandwidth of 51 GHz is proposed and demonstrated. The moderate Q factor of ~ 8000 and the operation wavelength detuning are optimized to relieve photon-lifetime-induced bandwidth limitation. Finally, with a voltage swing of 3 V, high-speed modulation of 20 and 44 Gb/s is experimentally demonstrated with the extinction ratio of 3.45 and 3.01 dB, showing great potential in the application of ultrahigh-capacity optical interconnects.

Published in:

Photonics Technology Letters, IEEE  (Volume:24 ,  Issue: 19 )