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30-nm Inverted \hbox {In}_{0.53}\hbox {Ga}_{0.47} \hbox {As} MOSHEMTs on Si Substrate Grown by MOCVD With Regrown Source/Drain

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4 Author(s)
Xiuju Zhou ; Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China ; Qiang Li ; Chak Wah Tang ; Kei May Lau

We report inverted-type In0.51Al0.49As/In0.53Ga0.47As MOSHEMTs grown by MOCVD on a Si substrate. n++ InGaAs with an electron density of 4.5 × 1019 cm-3 was selectively regrown in the source/drain regions to reduce parasitic resistance while eliminating the conventional gate recess etching. A 30-nm-channel-length device was successfully demonstrated with a maximum drain current of 1698 mA/mm, a peak transconductance of 1074 mS/mm at Vds = 0.5 V, a subthreshold slope of 172 mV/dec at Vds = 0.05 V, and a record-low on-resistance of 133 Ω·μm. An effective mobility of 4805 cm2/V· s was also extracted, indicating the high-quality metamorphic growth by MOCVD. In addition, the scalability of the inverted MOSHEMT on a Si substrate from 1 μm down to 30 nm was investigated.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 10 )