30-nm Inverted $\hbox{In}_{0.53}\hbox{Ga}_{0.47} \hbox{As}$ MOSHEMTs on Si Substrate Grown by MOCVD With Regrown Source/Drain

We report inverted-type In
_0.51
Al
_0.49
As/In
_0.53
Ga
_0.47
As MOSHEMTs grown by MOCVD on a Si substrate. n
⁺⁺
InGaAs with an electron density of 4.5 × 10
¹⁹
cm
^-3
was selectively regrown in the source/drain regions to reduce parasitic resistance while eliminating the conventional gate recess etching. A 30-nm-channel-length device was successfully demonstrated with a maximum drain current of 1698 mA/mm, a peak transconductance of 1074 mS/mm at V
_ds
= 0.5 V, a subthreshold slope of 172 mV/dec at V
_ds
= 0.05 V, and a record-low on-resistance of 133 Ω·μm. An effective mobility of 4805 cm
²
/V· s was also extracted, indicating the high-quality metamorphic growth by MOCVD. In addition, the scalability of the inverted MOSHEMT on a Si substrate from 1 μm down to 30 nm was investigated.