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In this letter, we demonstrate the usefulness of ultralow-power (ULP) junctionless (JL) MOSFETs in achieving improved analog/RF metrics as compared to nonunderlap and underlap MOSFETs. At a drain current (Ids) of 10 μA/μm, JL devices achieve two times higher values of cutoff frequency (fT) and maximum oscillation frequency (fMAX) along with 65% improvement in voltage gain (AVO) in comparison to conventional nonunderlap MOSFETs. ULP JL devices, which do not require source/drain (S/D) profile optimization, can perform comparably to underlap devices, thereby relaxing the stringent process constraints associated with S/D profile optimization in nanoscale devices. The results highlight new opportunities for realizing future ULP analog/RF design with JL transistors.
Date of Publication: Oct. 2012