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An ultra low voltage ultra low power CMOS UWB LNA using forward body biasing

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4 Author(s)
Dehqan, A. ; Sadjad Inst. for Higher Educ., Mashhad, Iran ; Kargaran, E. ; Mafinezhad, Khalil ; Nabovati, Hooman

A fully integrated low noise amplifier suitable for ultra-low voltage and ultra-low-power UWB applications is designed and simulated in a standard 0.18μm CMOS technology. Using the common gate, current reuse topology and forward body biasing technique, the proposed UWB LNA works at a very low supply voltage and low power consumption. The flat gain diagram of the LNA are achieved by the series inductors insertion between the cascaded stages of LNA .The proposed UWB LNA has a maximum power gain of 14.6 dB with a minimum noise figure of 3.7 dB, while consuming 3.1mW power with an ultra low supply voltage of 0.6 V.

Published in:

Circuits and Systems (MWSCAS), 2012 IEEE 55th International Midwest Symposium on

Date of Conference:

5-8 Aug. 2012