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A large-signal model for GaN HEMT devices is presented for use in medium power (1-2 W), S-band PA applications. The emphasis of the model is on quick extraction from standard measurements to facilitate research in this new operating regime for GaN HEMT devices. The entire model is extracted using small-signal S-parameter measurements under a small variety of bias conditions and DC IV characteristics without the need to sacrifice devices in the process. The validity of the model is demonstrated by the design and fabrication of both a class AB PA (achieving P1dB = 30.7 dBm and PAE = 64%) and class E PA (achieving max PAE = 64.4% at P0= 30.1 dBm) based on the model described.