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Browse Journals & Magazines > Electron Device Letters, IEEE ...> Volume:33 Issue:10 Help

480-GHz f_{\max } in InP/GaAsSb/InP DHBT With New Base Isolation \mu -Airbridge Design

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8 Author(s)
Zaknoune, M. ; Inst. d''Electron., de Microelectron. et de Nanotechnol., Villeneuve d''Ascq, France ; Mairiaux, E. ; Roelens, Y. ; Waldhoff, N.
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Self-aligned 0.55×3.5 μm2 emitter InP/GaAsSb/InP double heterojunction bipolar transistors demonstrating an ft of 310 GHz and an fmax of 480 GHz are reported. Common-emitter current gain of 24, together with a breakdown voltage of 4.6 V, is measured. The devices were fabricated with a triple-mesa process and easily fabricated with a new base isolation μ-airbridge design which, moreover, significantly reduced the base-collector capacitance CBC.

Published in:
Electron Device Letters, IEEE  (Volume:33 ,  Issue: 10 )

Date of Publication: Oct. 2012

Page(s):
1381 - 1383
ISSN :
0741-3106
INSPEC Accession Number:
13029918
Digital Object Identifier :
10.1109/LED.2012.2210187
Product Type:
Journals & Magazines
Date of Publication :
30 August 2012
Date of Current Version :
21 September 2012
Issue Date :
Oct. 2012
Sponsored by :
IEEE Electron Devices Society

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