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Self-aligned 0.55×3.5 μm2 emitter InP/GaAsSb/InP double heterojunction bipolar transistors demonstrating an ft of 310 GHz and an fmax of 480 GHz are reported. Common-emitter current gain of 24, together with a breakdown voltage of 4.6 V, is measured. The devices were fabricated with a triple-mesa process and easily fabricated with a new base isolation μ-airbridge design which, moreover, significantly reduced the base-collector capacitance CBC.
Date of Publication: Oct. 2012