Referenced Items are not available for this document.
We propose a novel four-mask low-temperature polycrystalline-silicon PMOS structure. In this letter, we obtain the utmost simplified thin-film transistor (TFT) structure by eliminating the storage doping, passivation, and anode photomask steps. The proposed four-mask structure has a self-aligned terrace structure whose lightly doped drain (LDD) and gate-overlapped LDD are formed with only one photomask step. The on current of the four-mask PMOS TFT with an advanced terrace structure is similar to that of the conventional seven-mask TFT, while the off current of the new structure is lower than that of the conventional seven-mask TFT.
Published in:
Electron Device Letters, IEEE
(Volume:33
,
Issue:
10
)
Date of Publication: Oct. 2012
- Page(s):
- 1417 - 1419
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 13029914
- Digital Object Identifier :
- 10.1109/LED.2012.2210024
- Product Type:
- Journals & Magazines
- Date of Publication :
- 30 August 2012
- Date of Current Version :
- 21 September 2012
- Issue Date :
- Oct. 2012
- Sponsored by :
- IEEE Electron Devices Society
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