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Error Rate-Based Wear-Leveling for nand Flash Memory at Highly Scaled Technology Nodes

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3 Author(s)
Yangyang Pan ; Dept. of Electr., Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA ; Guiqiang Dong ; Tong Zhang

This brief presents a NAND Flash memory wear-leveling algorithm that explicitly uses memory raw bit error rate (BER) as the optimization target. Although NAND Flash memory wear-leveling has been well studied, all the existing algorithms aim to equalize the number of programming/erase cycles among all the memory blocks. Unfortunately, such a conventional design practice becomes increasingly suboptimal as inter-block variation becomes increasingly significant with the technology scaling. This brief presents a dynamic BER-based greedy wear-leveling algorithm that uses BER statistics as the measurement of memory block wear-out pace, and guides dynamic memory block data swapping to fully maximize the wear-leveling efficiency. Simulations have been carried out to quantitatively demonstrate its advantages over existing wear-leveling algorithms.

Published in:

IEEE Transactions on Very Large Scale Integration (VLSI) Systems  (Volume:21 ,  Issue: 7 )