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Electron-hole pair generation rate of a monolithic integrated waveguide/photodetector: application to the modeling of monolithic integrated waveguide/p-i-n photodiodes

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3 Author(s)
Vinchant, J.-F. ; Centre Hyperfrequences et Semicond., Univ. des Sci. & Tech. de Lille-Flandres-Artois, Villeneuve d''Ascq, France ; Vilcot, J.-P. ; Decoster, D.

A report on the theoretical study of an integrated waveguide/photodetector is presented. The optical modeling is presented of an integrated waveguide/photodetector based on the absorption of the evanescent optical field in an absorbing layer which is deposited on the waveguiding layer. From this modeling, the expression of the electron-hole pair generation rate for such a device is established. This result is applied to the calculation of the dynamic quantum efficiency of an integrated waveguide/p-i-n photodiode. The static and dynamic behaviors of GaInAs p-i-n photodiodes monolithically integrated on a classical N-/n+ InP homostructure waveguide or on a GaInAsP/InP heterostructure waveguide are discussed, and optimized structures are pointed out

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Lightwave Technology, Journal of  (Volume:8 ,  Issue: 12 )