Referenced Items are not available for this document.
The first frame-transfer CMOS active pixel sensor (APS) is reported. The sensor architecture integrates an array of active pixels with an array of passive memory cells. Charge integration amplifer-based readout of the memory cells permits binning of pixels for variable resolution imaging. A 32×32 element prototype sensor with 24-μm pixel pitch was fabricated in 1.2-μm CMOS and demonstrated
Published in:
Electron Devices, IEEE Transactions on
(Volume:44
,
Issue:
10
)
Date of Publication: Oct 1997
- Page(s):
- 1764 - 1768
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 5712260
- Digital Object Identifier :
- 10.1109/16.628834
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Oct 1997
- Sponsored by :
- IEEE Electron Devices Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
