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Device design with automatic simulation system for basic CCD characteristics

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4 Author(s)
Tachikawa, K. ; ULSI Process Technol. Dev. Center, Matsushita Electron. Corp., Kyoto, Japan ; Umeda, T. ; Oda, Y. ; Kuroda, T.

A simulation system has been developed to automatically analyze basic electrical characteristics of a charge-coupled device (CCD) image sensor from a process simulation result. This system shortened the simulation period to approximately 1/10 by getting rid of complicated repetitious procedures. A high-performance new cell technology has been developed successfully with improving impurity distribution in shorter development time by using this system. This technology has been realized as a CCD cell pixel with CCD charge quantity of 1.8 times, effective transfer efficiency of over 99%, no image lag for driving read-out pulse voltage in comparison with conventional technology. A 1/4-in 330 K square pixel progressive-scan CCD was fabricated with this technology. These results are described to demonstrate the effectiveness of the automatic simulation system

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Electron Devices, IEEE Transactions on  (Volume:44 ,  Issue: 10 )