Referenced Items are not available for this document.
A simulation system has been developed to automatically analyze basic electrical characteristics of a charge-coupled device (CCD) image sensor from a process simulation result. This system shortened the simulation period to approximately 1/10 by getting rid of complicated repetitious procedures. A high-performance new cell technology has been developed successfully with improving impurity distribution in shorter development time by using this system. This technology has been realized as a CCD cell pixel with CCD charge quantity of 1.8 times, effective transfer efficiency of over 99%, no image lag for driving read-out pulse voltage in comparison with conventional technology. A 1/4-in 330 K square pixel progressive-scan CCD was fabricated with this technology. These results are described to demonstrate the effectiveness of the automatic simulation system
Published in:
Electron Devices, IEEE Transactions on
(Volume:44
,
Issue:
10
)
Date of Publication: Oct 1997
- Page(s):
- 1611 - 1616
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 5712238
- Digital Object Identifier :
- 10.1109/16.628812
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Oct 1997
- Sponsored by :
- IEEE Electron Devices Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
