By Topic

Spontaneous emission and optical gain characteristics of blue InGaAlN/InGaN quantum well structures with reduced internal field

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Park, Seoung-Hwan ; Department of Electronics Engineering, Catholic University of Daegu, Hayang, Kyeongsan, Kyeongbuk 712-702, South Korea ; Ahn, Doyeol

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.4747841 

Spontaneous emission and optical gain characteristics of blue InGaAlN/InGaN quantum well (QW) structures with reduced internal field were investigated by using the non-Markovian model with many-body effects. The spontaneous emission coefficient of the InGaAlN/InGaN system with reduced internal field is shown to be increased by 30% compared to that of the conventional InGaN/GaN system. This is mainly due to the increase in the optical matrix element by the reduced internal field effect. If the threshold optical gain is assumed to be about 13000cm-1, the InGaAlN/InGaN QW structure is expected to have smaller threshold current density the InGaN/GaN QW structure. In the case of the InGaAlN/InGaN system, the transition wavelength is a weak function of the carrier density.

Published in:

Journal of Applied Physics  (Volume:112 ,  Issue: 4 )