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Integrated RF components in a SiGe bipolar technology

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8 Author(s)
Burghartz, J.N. ; IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA ; Soyuer, M. ; Jenkins, K.A. ; Kies, M.
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Several components for the design of monolithic RF transceivers on silicon substrates are presented and discussed. They are integrated in a manufacturable analog SiGe bipolar technology without any significant process alterations. Spiral inductors have inductance values in the range of ~0.15-80 nH with typical maximum quality-factors (Qmax ) of 3-20. The Qmax's are highest if the doping concentration under the inductors is kept minimum. It is shown that the inductor area is an important parameter toward optimization of Qmax at a given frequency. The inductors can be represented in circuit design by a simple lumped-element model. MOS capacitors have Q's of ~20/f (GHz)/C(pF), metal-insulator-metal (MIM) capacitors reach Q's of ~80/f (GHz)/C(pF), and varactors with a 40% tuning range have Q's of ~70/f (GHz)/C(pF). Those devices can he modeled by using lumped elements as well. The accuracy of the modeling is verified by comparing the simulated and the measured high-frequency characteristics of a fully integrated, passive-element bandpass filter

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:32 ,  Issue: 9 )

Date of Publication:

Sep 1997

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