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A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design

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8 Author(s)
Voinigescu, S.P. ; Nortel Technol., Northern Telecom Canada Ltd., Ottawa, Ont., Canada ; Maliepaard, M.C. ; Showell, J.L. ; Babcock, G.E.
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Fully scalable, analytical HF noise parameter equations for bipolar transistors are presented and experimentally tested on high-speed Si and SiGe technologies. A technique for extracting the complete set of transistor noise parameters from Y parameter measurements only is developed and verified. Finally, the noise equations are coupled with scalable variants of the HICUM and SPICE-Gummel-Poon models and are employed in the design of tuned low noise amplifiers (LNA's) in the 1.9-, 2.4-,and 5.8-GHz bands

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:32 ,  Issue: 9 )

Date of Publication:

Sep 1997

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