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Capacitance Modeling and Characterization of Planar MOSCAP Devices for Wideband-Gap Semiconductors With High- \kappa Dielectrics

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6 Author(s)
Bothe, K.M. ; Dept. of Electr. & Comput. Eng., Univ. of Alberta, Edmonton, AB, Canada ; von Hauff, P.A. ; Afshar, A. ; Foroughi-Abari, A.
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This paper presents a capacitance model and mobility extraction method through the use of tapered transmission line theory for accumulation-mode MOSCAP test structures. The analytical model accounts for the discrepancies commonly found when measuring the capacitance of nontraditional MOSCAP architectures. Through fabrication of a planar MOSCAP, this model accurately reproduced consistent capacitance density measurements for several device dimensions and high-κ dielectric thicknesses. In this paper, the theoretical basis of the model extracts the effective electron mobility of the accumulation channel in the semiconductor without fabricating a transistor.

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Electron Devices, IEEE Transactions on  (Volume:59 ,  Issue: 10 )