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40-Gb/s ICs for future lightwave communications systems

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8 Author(s)
Otsuji, T. ; NTT Syst. Electron. Labs., Kanagawa, Japan ; Imai, Y. ; Sano, E. ; Kimura, S.
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This paper describes the device, circuit design, and packaging technologies applicable to 40-Gb/s-class future lightwave communications systems. A 0.1-μm gate InAlAs-InGaAs high electron mobility transistors (HEMTs) with InP recess etch stopper was adopted mainly for IC fabrication. Fabricated ICs demonstrate excellent data-multiplexing, demultiplexing, and amplifying operation at 10 Gb/s

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Solid-State Circuits, IEEE Journal of  (Volume:32 ,  Issue: 9 )