By Topic

Electron band alignment at the interface of (100)InSb with atomic-layer deposited Al2O3

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
6 Author(s)
Chou, H.-Y. ; Department of Physics and Astronomy, University of Leuven, B-3001 Leuven, Belgium ; Afanasev, V.V. ; Houssa, M. ; Stesmans, A.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

From experiments on internal photoemission of electrons at the (100)InSb/Al2O3 interface, the top of the InSb valence band is found to be 3.05 ± 0.10 eV below the oxide conduction band and corresponds to a conduction band offset of 2.9 ± 0.1 eV. These results indicate that the top of valence band in InSb lies energetically at the same level as in GaSb and above the valence bands in InxGa1-xAs (0 ≤ x ≤ 0.53) or InP, suggesting that variation of the group III cation has no significant impact on the energy of the semiconductor valence band top and, therefore, it mostly affects the conduction band bottom edge.

Published in:

Applied Physics Letters  (Volume:101 ,  Issue: 8 )