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Analysis and Design of 60-GHz SPDT Switch in 130-nm CMOS

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3 Author(s)
Jin He ; Inst. of Microelectron., A*STAR, Singapore, Singapore ; Yong-Zhong Xiong ; Yue Ping Zhang

This paper proposes a new 60-GHz single-pole-double-throw (SPDT) switch. It is designed in a 1.2-V 130-nm bulk CMOS and has a small core area of 222 μm × 92 μm. The switch exhibits measured insertion loss of 1.7 dB, isolation of 22 dB, input return loss of 20 dB, output return loss of 14 dB, and simulated power-handling capability of 13.8 dBm at 60 GHz. The proposed SPDT switch demonstrates such superior performances and consumes a much smaller die area to those of other SPDT switches, and therefore has potential to be used in highly integrated 60-GHz CMOS radios.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:60 ,  Issue: 10 )

Date of Publication:

Oct. 2012

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