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We propose an epitaxial punchthrough diode for bipolar resistance RAM (RRAM) selector application. Epitaxial Si:C process is used to deposit n+/p/n+ layers which are fabricated into 300-nm-diameter vertical punchthrough diodes. High on-current density of >; 1 MA/cm2 and high on/off current ratio of >; 250 and >; 4700 (at opposite polarities) are observed. A switching speed of <; 10 ns is measured. On-voltage designability is demonstrated by tuning the p-region doping and length. The comparison of experimental IV with Sentaurus TCAD-simulated IV characteristics confirms the punchthrough mechanism. Comparison with other bipolar RRAM selector technologies highlights the overall advantages of punchthrough-based selector.
Published in:
Electron Device Letters, IEEE
(Volume:33
,
Issue:
10
)
Date of Publication: Oct. 2012
- Page(s):
- 1396 - 1398
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 13029905
- Digital Object Identifier :
- 10.1109/LED.2012.2209394
- Product Type:
- Journals & Magazines
- Date of Publication :
- 24 August 2012
- Date of Current Version :
- 21 September 2012
- Issue Date :
- Oct. 2012
- Sponsored by :
- IEEE Electron Devices Society
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