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High power modulator driver ICs up to 30 Gb/s with AlGaAs/GaAs HEMTs

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11 Author(s)
Lao, Z. ; Fraunhofer-Inst. of Appl. Solid-State Phys., Freiburg, Germany ; Thiede, A. ; Nowotny, U. ; Schlechtweg, M.
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Two monolithic integrated transmitter circuits of a modulator driver and a modulator driver with a 2:1 multiplexer for high-speed optical-fiber links are presented. The ICs featuring differential configuration were fabricated in a 0.2 /spl mu/m gate-length enhancement and depletion HEMT technology with 60 GHz and 55 GHz f/sub T/. The modulator driver operates up to 25 Gb/s with an output voltage swing of 3.3 V/sub p-p/ at each output (corresponding to an internal current swing of 100 mA). The total voltage gain is 22 dB. The modulator driver with a integrated 2:1 multiplexer performs a data rate up to 30 Gb/s with an output voltage swing of 2.2 V/sub p-p/ at each output. Each circuit consumes 1.4 W power using a single supply voltage of -5 V.

Published in:

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual

Date of Conference:

12-15 Oct. 1997

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