Referenced Items are not available for this document.
A 0.15 um gate process using a deep-UV stepper and phase-shifting mask lithography has been developed. This process eliminates the need for low throughput, direct write e-beam gate lithography. Using this process we have fabricated, for the first time, AlInAs/GaInAs MHEMTs on GaAs with f/sub t/'s up to 119 GHz. This optical approach for gate lithography is very attractive for manufacturing high volume, high performance, low cost GaAs integrated circuits.
Published in:
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual
Date of Conference: 12-15 Oct. 1997
- Page(s):
- 74 - 77
- Meeting Date :
- 12 Oct 1997-15 Oct 1997
- ISSN :
- 1064-7775
- Print ISBN:
- 0-7803-4083-3
- INSPEC Accession Number:
- 5801705
- Conference Location :
- Anaheim, CA, USA
- Digital Object Identifier :
- 10.1109/GAAS.1997.628241
- Product Type:
- Conference Publications
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