By Topic

0.15 micron gate AlInAs/GaInAs MHEMT fabricated on GaAs using deep-UV phase-shifting mask lithography

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Wang, J.G. ; Microwave Technol. Div., Hewlett-Packard Co., Santa Rosa, CA, USA ; Hur, K.Y. ; Studebaker, L.G. ; Keppeler, B.C.
more authors

A 0.15 um gate process using a deep-UV stepper and phase-shifting mask lithography has been developed. This process eliminates the need for low throughput, direct write e-beam gate lithography. Using this process we have fabricated, for the first time, AlInAs/GaInAs MHEMTs on GaAs with f/sub t/'s up to 119 GHz. This optical approach for gate lithography is very attractive for manufacturing high volume, high performance, low cost GaAs integrated circuits.

Published in:

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual

Date of Conference:

12-15 Oct. 1997