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0.15 micron gate AlInAs/GaInAs MHEMT fabricated on GaAs using deep-UV phase-shifting mask lithography

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5 Author(s)
Wang, J.G. ; Microwave Technol. Div., Hewlett-Packard Co., Santa Rosa, CA, USA ; Hur, K.Y. ; Studebaker, L.G. ; Keppeler, B.C.
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A 0.15 um gate process using a deep-UV stepper and phase-shifting mask lithography has been developed. This process eliminates the need for low throughput, direct write e-beam gate lithography. Using this process we have fabricated, for the first time, AlInAs/GaInAs MHEMTs on GaAs with f/sub t/'s up to 119 GHz. This optical approach for gate lithography is very attractive for manufacturing high volume, high performance, low cost GaAs integrated circuits.

Published in:

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual

Date of Conference:

12-15 Oct. 1997