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A 0.15 um gate process using a deep-UV stepper and phase-shifting mask lithography has been developed. This process eliminates the need for low throughput, direct write e-beam gate lithography. Using this process we have fabricated, for the first time, AlInAs/GaInAs MHEMTs on GaAs with f/sub t/'s up to 119 GHz. This optical approach for gate lithography is very attractive for manufacturing high volume, high performance, low cost GaAs integrated circuits.
Date of Conference: 12-15 Oct. 1997