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Ballistic deposition simulation of via metallization using a quasi-three-dimensional model

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3 Author(s)
T. Smy ; Carleton Univ., Ottawa, Ont., Canada ; R. N. Tait ; M. J. Brett

A quasi-three-dimensional ballistic deposition model for thin film growth by physical vapor deposition is described. This model incorporates three-dimensional incident flux distributions and shadowing effects, but simulates deposition through disc accretion in a two-dimensional plane. Results from the simulation of sputtered metal deposition over vias ranging from 0.5 to 3.0 μm width are presented and compared with two-dimensional simulation results. Step coverages are calculated and plotted as a function of via size. The use of a ballistic deposition program enables a density analysis of the simulated films. The simulated films display a drop in density of 22-27% for the films deposited on the via sidewalls, and this density drop is plotted versus via size for both the two-dimensional and three-dimensional simulations

Published in:

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems  (Volume:10 ,  Issue: 1 )