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Synthesized Aluminum Nanowires for Future Interconnects [Nanopackaging]

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3 Author(s)
Sungwoo Hwang ; Samsung Adv. Inst. of Technol. (SAIT), Yongin, South Korea ; Chan-Wook Baik ; Whang, Dongmok

Although the Al interconnect became an old technology that was already replaced by Cu, the world of bottom-up synthesis could give the old Al a new opportunity. While there is not much data in relation to bottom-up synthesized Cu nanowires, this stress-induced grown AlNWs show almost ideal resistivity originated from perfect surface without grain boundaries. It also showed low loss microwave transmission over 100 GHz, and the breakdown current is much larger than that of patterned interconnects. One difficulty of such bottom-up synthesized nanowires is the accurate alignment of the nanowires at the designated position. There are several works that provide possible clues to this problem. The dielectrophoretic alignment and solution-based Langmuir-Blodgett technique are some examples.

Published in:

Nanotechnology Magazine, IEEE  (Volume:6 ,  Issue: 3 )