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Simulation of a MOS transistor with spatially nonuniform channel parameters

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2 Author(s)
R. Booth ; Sherman Fairchild Lab., Lehigh Univ., Bethlehem, PA, USA ; M. White

A simulation technique is described for the MOS transistor with spatially nonuniform channel parameters, such as voltage, channel width, oxide thickness, flatband voltage, and interface state density. The model is one-dimensional and relies on a charge-sheet description of the inversion layer. Simulation results are shown for the case of a transistor with a nonuniform profile of trapped negative charge

Published in:

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems  (Volume:9 ,  Issue: 12 )