Simulation of a MOS transistor with spatially nonuniform channel parameters

A simulation technique is described for the MOS transistor with spatially nonuniform channel parameters, such as voltage, channel width, oxide thickness, flatband voltage, and interface state density. The model is one-dimensional and relies on a charge-sheet description of the inversion layer. Simulation results are shown for the case of a transistor with a nonuniform profile of trapped negative charge.<
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