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A nonequilibrium one-dimensional quantum-mechanical simulation for AlGaAs/GaAs HEMT structures

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3 Author(s)
Takano, C. ; Integrated Circuits Lab., Stanford Univ., CA, USA ; Zhiping Yu ; Dutton, R.W.

An accurate method of simulating nonequilibrium gate current and sheet-carrier concentration in AlGaAs/GaAs HEMT structures is reported. The calculation is based upon self-consistent solving of Schrodinger's equation, Poisson's equation and continuity equations. A concept for three-dimensional electrons accompanied by two-dimensional electrons in a quantum well at a heterointerface makes it possible to solve the continuity equation at the quantum-well region. Thermionic emission theory is applied for the current expression across an abrupt heterointerface. As a result, there is a certain voltage drop across the heterointerface, which helps prevent the creation of the neutral region in the AlGaAs layer. Simulated results explain measured gate-current and channel-conductance characteristics of a HEMT structure

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Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:9 ,  Issue: 11 )