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Three-Dimensional Coaxial Through-Silicon-Via (TSV) Design

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2 Author(s)
Zheng Xu ; IBM Microelectron., Hopewell Junction, NY, USA ; Jian-Qiang Lu

Being one of the most attractive 3-D integration solutions, through-silicon-vias (TSVs) electrically connect multiple strata of integrated circuits and/or devices in a vertical fashion. This paper examines the electrical performance of coaxial TSV, which is a new configuration that offers better signal integrity than other TSV structures. Various processing materials and physical geometries are considered for coaxial TSV designs. The full-wave extraction and empirical calculations show good agreement in TSV passive elements (RLGC). Latency, power, and crosstalk are evaluated and compared between coaxial TSVs and common signal-ground (S-G) paired TSVs. Furthermore, a wideband SPICE model is established to well fit the coaxial TSV fullwave solution, facilitating 3-D system design and evaluation.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 10 )