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In this letter, a temperature drift compensation technique for Substrate Integrated Waveguide (SIW) oscillator is proposed. The drift compensation is achieved with the use of an appropriate ratio between the coefficient of thermal expansion and the thermal coefficient of the permittivity. A cavity is first designed and measured to demonstrate the potential of the proposed technique. Measured performances are compared to those for other cavities of different substrates. An oscillator, based on an SIW cavity, is designed and fabricated at 10 GHz to validate the application of the proposed technique. Measured results show a stability of 2 ppm/°C in the temperature operating range of -40 to 80°C.