Cart (Loading....) | Create Account
Close category search window
 

Frequency shifts in two-level ultra-deep reactive ion etched slow-wave structures for 0.1 THz backward-wave oscillations

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

12 Author(s)
Chan-Wook Baik ; Samsung Advanced Institute of Technology, Yongin 446-712, South Korea ; Seogwoo Hong ; Kim, Jongseok ; Ho Young Ahn
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.4745774 

We present microfabricated slow-wave structures for millimeter- or terahertz-wave vacuum electronic sources. A two-level ultra-deep reactive ion etching (u-DRIE) on highly doped silicon wafers has been employed and allowed for complicated 3-dimensional structures with high aspect ratio. The measured spectra of return loss, however, show 1.2% and 6.8% upshifts in both cutoff and resonant frequencies, respectively. We found the suppression of two-level u-DRIE at the narrow channel between resonant cavities has caused the change of aspect ratios, i.e., saddle-shaped bottom surfaces, which is proved to be associated with the difference in frequency shifts as well as RF attenuation by comparison with theoretical prediction.

Published in:

Applied Physics Letters  (Volume:101 ,  Issue: 7 )

Date of Publication:

Aug 2012

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.