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Widely reconfigurable 8th-order chebyshev analog baseband IC with proposed push-pull op-amp for Software-Defined Radio in 65nm CMOS

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5 Author(s)
Le Ye ; Inst. of Microelectron., Peking Univ., Beijing, China ; Yixiao Wang ; Long Chen ; Huailin Liao
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This paper presents an 8th-order chebyshev active-RC analog baseband IC with tunable cut-off frequency from 500K to 16MHz and adjustable gain from 5.5dB to 70dB for a Software-Defined Radio (SDR) receiver. For the analog baseband, a highly power-efficient push-pull op-amp with two differential-to-single output stages is proposed, which is suitable for the advanced deep-submicron CMOS process. It achieves 45dB gain and 850MHz GBW with only 0.8mA current. I/Q analog baseband IC, consisting of filter, PGA/VGA, and DCOC, is integrated for a SDR receiver, which is fabricated in a standard 65nm CMOS technology. It consumes 9.2mA current from 1.2V power supply, achieves 17.44dBm in-band OIP3, 11.43nV/√Hz input-referred noise (IRN) density, and occupies 0.68mm2 silicon area.

Published in:

Circuits and Systems (ISCAS), 2012 IEEE International Symposium on

Date of Conference:

20-23 May 2012