Cart (Loading....) | Create Account
Close category search window

An ultra-low-power 902–928MHz RF receiver front-end in CMOS 90nm process

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Xiaojun Tu ; Dept. of Electr. Eng. & Comput. Sci., Univ. of Tennessee, Knoxville, TN, USA ; Holleman, Jeremy H.

This paper presents a CMOS RF receiver front-end suitable for ultra-low-power operation. In order to achieve desired gain and linearity of receiver front-end at a 1V supply voltage, current reuse and optimum gate biasing techniques are employed. The proposed architecture includes merged LNA and mixer, operating in the sub-threshold region, and designed for the 902-928MHz ISM band. The proposed circuit is designed in a 90nm CMOS Process and occupies 0.04mm2. The post-layout simulations of front end show a voltage gain of 17.8dB, a noise figure of 6.7 dB and IIP3 better than -8 dBm. Its power consumption is only 218uW from a 1V supply.

Published in:

Circuits and Systems (ISCAS), 2012 IEEE International Symposium on

Date of Conference:

20-23 May 2012

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.