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A 11 µW 0°C–160°C temperature sensor in 90 nm CMOS for adaptive thermal monitoring of VLSI circuits

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3 Author(s)
Zjajo, A. ; Circuits & Syst. Group, Delft Univ. of Technol., Delft, Netherlands ; van der Meijs, N. ; van Leuken, R.

This paper reports design, efficiency and measurement results of the temperature sensor based on substrate bipolar transistors and a PTAT multiplier for adaptive thermal monitoring of deep-submicron VLSI circuits. The prototype temperature sensor with un-calibrated 3σ accuracy of 0.9°C within a 0°C-160°C temperature range has been fabricated in standard single poly, six metal 90nm CMOS, consumes only 11μW at 1V power supply and measures 0.05mm2.

Published in:

Circuits and Systems (ISCAS), 2012 IEEE International Symposium on

Date of Conference:

20-23 May 2012